PART |
Description |
Maker |
SHB636053E09 |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
|
Sensitron
|
SSR40C20 SSR40C30 SSR40C30CT SSR40C20CTM |
20 A, 200 V, SILICON CARBIDE, RECTIFIER DIODE, TO-254AA 40A / 300V Schottky Silicon Carbide Centertap Rectifier
|
SOLID STATE DEVICES INC Solid States Devices, Inc
|
FBS10-06SC IXYSCORP-FBS10-06SC |
Silicon Carbide Schottky Rectifier Bridge in ISOPLUS i4-PAC 3 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
IXYS, Corp. IXYS[IXYS Corporation]
|
GB05SHT06-CAU-15 |
High Temperature Silicon Carbide Power Schottky Diode
|
GeneSiC Semiconductor, ...
|
SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package 600V Silicon Carbide Ultrafast Schottky Diode Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
UPSC203 UPSC403 UPSC603 |
Silicon Carbide Schottky Rectifiers Silicon Carbide (SiC) Schottky
|
Microsemi Corporation
|
BFP25 BFP22 Q62702-F721 Q62702-F621 Q62702-F201 Q6 |
NPN Silicon Transistor with high Reve... From old datasheet system NPN Silicon Transistors with High Reverse Voltage Isolation- UL94V-0 Package Material- Power Sharing on Output- Efficiency to 84% NPN Silicon RF Transisrors NPN Silicon Transistors (High breakdown voltage l Low collector-emitter saturation voltage) NPN硅晶体管(高耐压l低集电极发射极饱和电压)
|
SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
|
NXPSC10650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
NXPSC06650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
SHD620112 |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
C4D10120D-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|